STMicroelectronics STD6N62K3 MOSFETs N-Channel 620V 1.1 Ohms 5.5A

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Fall Time: 19 ns

Rise Time: 12.5 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 90 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.28 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3 V