STMicroelectronics STD60NF55LT4 MOSFET N-Ch 55 Volt 60 Amp

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Fall Time: 35 ns

Rise Time: 180 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 1 V