STMicroelectronics STB120NF10T4 MOSFET N-Ch 100 Volt 120Amp

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Fall Time: 68 ns

Rise Time: 90 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 172 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 312 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 132 ns

Id - Continuous Drain Current: 110 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V