STMicroelectronics SCTWA90N65G2V-4 SiC MOSFETS Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A

Fall Time: 16 ns

Rise Time: 38 ns

Technology: SiC

Unit Weight: 6.080 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 157 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 565 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 119 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V