STMicroelectronics SCTWA40N12G24AG SiC MOSFETS ຊິລິກອນຄາບາດລະດັບຍານພາຫະນະ Power MOSFET 1200 V, 75 mOhm typ., 33 A ໃນຊຸດ HiP247-4

Fall Time: 13 ns

Rise Time: 5 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 63 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 290 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 33 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 105 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5 V