STMicroelectronics SCTWA40N120G2V SiC MOSFETS Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A ໃນກໍລະນີ HiP247

Fall Time: 7.9 ns

Rise Time: 10.3 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 61 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 278 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 13.4 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.45 V