STMicroelectronics SCTWA35N65G2V-4 SiC MOSFETS Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A ໃນຊຸດ HiP247-4

Fall Time: 14 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 73 nC

Number of Channels: 1 Channel

Pd - Power Dissipation: 240 W

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 67 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V