STMicroelectronics SCTW60N120G2 SiC MOSFETS Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A ໃນແພັກເກັດ HiP247

Fall Time: 14 ns

Rise Time: 16 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 94 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 389 W

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5 V