STMicroelectronics SCT10N120H Silicon Carbide (SiC) MOSFETs ແລະ Modules

Channel Type: N Channel

Power Dissipation: 130

Transistor Case Style: H2PAK

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 13

Mosfet Module Configuration: Single

Drain Source On State Resistance: 690

Gate Source Threshold Voltage Max: 3.5

Datasheet