STMicroelectronics SCT070H120G3-7 SiC MOSFETS Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A ໃນຊຸດ H2PAK-7

Fall Time: 9.9 ns

Rise Time: 26.6 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 223 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 18.7 ns

Typical Turn-Off Delay Time: 17.6 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 87 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3 V