STMicroelectronics SCT025W120G3-4AG SiC MOSFETS ຊິລິກອນຄາບາດລະດັບລົດຍົນ Power MOSFET 1200 V, 27 mOhm typ., 56 A ໃນຊຸດ HiP247-4

Fall Time: 18 ns

Rise Time: 5.7 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 73 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 388 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 16.4 ns

Typical Turn-Off Delay Time: 32.5 ns

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.2 V