STMicroelectronics SCT020W120G3-4AG SiC MOSFETS ຊິລິກອນຄາບາດລະດັບລົດຍນຕະຫລາດ Power MOSFET 1200 V, 18.5 mOhm typ., 100 A ໃນຊຸດ HiP247-4

Fall Time: 22 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 121 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 541 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3 V