STMicroelectronics SCT012H90G3AG silicon carbide Power MOSFET ລະດັບລົດຍົນ silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A ໃນຊຸດ H2PAK-7

Fall Time: 30 ns

Rise Time: 47 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 138 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 82 ns

Id - Continuous Drain Current: 110 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 4.2 V