STMicroelectronics SCT011HU75G3AG SiC MOSFETS ຊິລິກອນຄາບາດລະດັບລົດຍົນ Power MOSFET 750 V, 11.4 mOhm typ., 110 A ໃນຊຸດ HU3PAK

Fall Time: 9 ns

Rise Time: 11 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 154 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 652 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 110 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 3.2 V