STMicroelectronics PD55008-E ອາວຸດ RF Power MOSFET RF POWER TRANS

Gain: 17 dB

Width: 9.4 mm

Height: 3.5 mm

Length: 7.5 mm

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 8 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52.8 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 1.6 S

Vds - Drain-Source Breakdown Voltage: 40 V