STMicroelectronics MASTERGAN4 ຄວາມແບບສອງຂອງການຂັບເຄື່ອນຄວາມຫຼາຍພະລັງງານສູງ 600V, ຄວາມແບບສອງຂອງການຂັບເຄື່ອນ, ສອງຮູບແບບການປັບປຸງ GaN power HEMT

Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver

Dimensions: 9 mm x 9 mm x1 mm

Unit Weight: 150 mg

Mounting Style: SMD/SMT

Output Current: 6.5 A

Number of Drivers: 2 Driver

Number of Outputs: 3 Output

Moisture Sensitive: Yes

Input Voltage - Max: 15 V

Input Voltage - Min: 3.3 V

Supply Voltage - Max: 15 V

Supply Voltage - Min: 3.3 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 225 mOhms