STMicroelectronics BYW51G-200-TR ດາຍໂດດສະຫວັດ

Speed: Fast Recovery =< 500ns > 200mA(Io)

Diode type: Standard

Mounting Type: Surface Mount

Diode Configuration: 1Pair Common Cathode

Reverse recovery time: 35ns

Average rectified current: 20A

Operating temperature range: 150 C (Max)

Spannung – DC Reverse Vr Max: 200V

Repetitive peak reverse voltage: 200V

Spannung – Vorwärts (Vf) Max: 850mV@8A

最大非繰り返しサージ電流: 100A

Current - Average Rectified Io per Diode: 10A

Current - Reverse Leakage with Vr Applied: 15uA@200V