STMicroelectronics 2STR1215 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີຣ໌ Lo Vltg FAST SWITCH Hi GAIN PNP

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 400 mV