ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Isolation voltage: ±1000 V (max)
Leakage current: <2 µA at 1000 VDC
Isolation capacitance: 1000 pF
IMRR: 150 dB (DC)
Max. input: ±10 V
Input Impedance: 1 MΩ
Input noise (typ.): 15 nV/√Hz at 1 kHz
Input offset drift: 3 µV/°C (typ)
Output voltage range: ±10 V
Output current: ±20 mA (max)
Output resistance: 50 Ω
Output offset: ±0.1 V, adjustable
Output offset drift: 1 mV/°C (typ.)
Output noise:
80 µVrms (100 Hz bandwidth)
200 µVrms (10 kHz bandwidth)
1.5 mVrms (1 MHz bandwidth)
Gain: x1, x10, x100
Gain error: ±0.5 %
THD: 0.005 % (at 1 kHz, 600 Ω load)
Frequency range:
DC to 100 Hz (Low BW)
DC to 10 kHz (Mediate BW)
DC to 1 MHz (High BW)
Rise time: 300 ns (Vout = 4 V)
Slew rate: 25 V/µs (Vout = 20 Vpp)
Interface: Serial via SIM interface
Connectors:
Banana jacks (2 front-panel),
BNC (1 front-panel),
BNC (1 rear-panel)
DB15 (male) SIM interface
Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V, +5 V, and +24 V).
Dimensions: 1.5" × 3.6" × 7.0" (WHL)
Weight: 1.5 lbs.
