Vishay Siliconix SQJQ404E-T1_GE3 MOSFETs 40V Vds 20V Vgs PowerPAK 8 x 8L

Fall Time: 8 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 50 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 175 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 160 S

Rds On - Drain-Source Resistance: 1.72 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V