Vishay Siliconix SIZF920DT-T1-GE3 MOSFETs Dual 30V Vds PowerPAIR 6x5F

Fall Time: 5 ns, 10 ns

Rise Time: 5 ns, 70 ns

Technology: Si

Unit Weight: 337.318 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 29 nC, 125 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W, 74 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V, - 12 V, + 16 V

Typical Turn-On Delay Time: 11 ns, 17 ns

Typical Turn-Off Delay Time: 20 ns, 43 ns

Id - Continuous Drain Current: 76 A, 197 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 65 S, 135 S

Rds On - Drain-Source Resistance: 3.07 mOhms, 1.05 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V