Vishay Siliconix SiSS5623DN-T1-GE3 MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V

Fall Time: 5 ns

Rise Time: 5 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 21.8 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 56.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 36.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 23 S

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V