Vishay Siliconix SIR681DP-T1-RE3 P-Channel 80 V (D-S) MOSFET POWRPK P CHAN 80V

Width: 5.15 mm

Length: 6.15 mm

Fall Time: 14 ns, 47 ns

Rise Time: 11 ns, 91 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 31.7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns, 40 ns

Typical Turn-Off Delay Time: 36 ns, 42 ns

Id - Continuous Drain Current: 71.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11.2 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V