Vishay Siliconix SIHS90N65E-GE3 MOSFETs SPR247 650V 87A N-CH MOSFET

Fall Time: 267 ns

Rise Time: 152 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: E Series Power MOSFET

Qg - Gate Charge: 394 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 85 ns

Typical Turn-Off Delay Time: 323 ns

Id - Continuous Drain Current: 87 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V