Vishay Siliconix SIHG180N60E-GE3 MOSFETs 650V Vds; 30V Vgs TO-247AC

Fall Time: 23 ns

Rise Time: 49 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.3 S

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V