Vishay Siliconix SI7973DP-T1-GE3 MOSFETs 12V 12.8A 3.5W 15mohm @ 4.5V

Width: 5.15 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 260 ns

Rise Time: 72 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 360 ns

Id - Continuous Drain Current: 12.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V