Vishay Siliconix SI1499DH-T1-E3 MOSFETs 8.0V 1.6A 2.78W 78 mohms @ 4.5V

Width: 1.25 mm

Height: 1 mm

Length: 2.1 mm

Fall Time: 60 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.78 W

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 350 mV