ROHM Semiconductor SP8M41HZGTB MOSFETs AECQ

Fall Time: 12 ns, 20 ns

Rise Time: 12 ns, 15 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 9.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns, 14 ns

Typical Turn-Off Delay Time: 40 ns, 60 ns

Id - Continuous Drain Current: 3.4 A, 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S, 3 S

Rds On - Drain-Source Resistance: 130 mOhms, 240 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V