ROHM Semiconductor SH8J31GZETB MOSFETs 60V Pch+Pch Si MOSFET

Fall Time: 40 ns, 40 ns

Rise Time: 18 ns, 18 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 40 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns, 17 ns

Typical Turn-Off Delay Time: 100 ns, 100 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.5 S, 6.5 S

Rds On - Drain-Source Resistance: 70 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V