ROHM Semiconductor SCT4062KWAHRTL MOSFET's TO263 1.2KV 24A N-CH SIC

Fall Time: 10 ns

Rise Time: 11 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 93 W

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 4.4 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 6.5 S

Rds On - Drain-Source Resistance: 81 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.8 V