ROHM Semiconductor SCT4026DWAHRTL Power MOSFET TO263 750V 51A N-CH SIC

Fall Time: 13 ns

Rise Time: 22 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 94 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 9.5 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 51 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V