ROHM Semiconductor SCT3160KWAHRTL MOSFET's 1200V, 17A, 7-pin SMD, ຮູບແບບຫຼັກຖ່ອງ, ຊິລິກອນ-ຄາບາຍດ (SiC) MOSFET ສໍາລັບຍານພາຫະນະ : ຜະລິດຕະພັນລະດັບຍານພາຫະນະ AEC-Q101 ທີ່ຜ່ານການຮັບຮອງ. SCT3160KWAHR ແມ່ນ SiC (Silicon Carbide) trench MOSFET. ຄຸນສົມບັດລວມມີການຕ້ານທານແຮງດັນສູງ, ຄວາມຕ້ານທານ ON ຕ່ຳ, a

Fall Time: 9 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 42 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 208 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V