ROHM Semiconductor SCT3105KRC14 SiC MOSFETS 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver

Fall Time: 10 ns

Rise Time: 12 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 51 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 134 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.4 S

Rds On - Drain-Source Resistance: 105 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V