ROHM Semiconductor SCT3060ARC15 MOSFET's TO247 650V 39A N-CH SIC

Fall Time: 14 ns

Rise Time: 15 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 58 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 165 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 39 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 4.9 S

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V