ROHM Semiconductor SCT3040KW7TL MOSFET's 1200V 56A, 7-pin SMD, ໂຄງສ້າງຮ່ອງ, ຊິລິຄອນຄາໄບ (SiC) MOSFET

Fall Time: 19 ns

Rise Time: 19 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 107 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 267 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 8.3 S

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V