ROHM Semiconductor SCT3022KLHRC11 MOSFET's 1200V 95A 427W SIC 22mOhm TO-247N

Fall Time: 28 ns

Rise Time: 44 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 178 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 427 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 29 ns

Typical Turn-Off Delay Time: 67 ns

Id - Continuous Drain Current: 95 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14.2 S

Rds On - Drain-Source Resistance: 28.6 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V