ROHM Semiconductor SCT2H12NYTB MOSFET's N-Ch 1700V 4A 44W SiC ຊິລິກອນ ຄາບາດ

Fall Time: 74 ns

Rise Time: 21 ns

Technology: SiC

Unit Weight: 6.500 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 44 W

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 400 mS

Rds On - Drain-Source Resistance: 1.5 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4 V