ROHM Semiconductor SCS320AHGC9 ດາຍໂອດ Schottky Silicon Carbide 650V;20A;115W SiC SBD TO-220ACP

Technology: SiC

Unit Weight: 3.896 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 20 A

Ir - Reverse Current: 100 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 115 W

Ifsm - Forward Surge Current: 123 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V