ROHM Semiconductor RZR025P01TL MOSFETs Med Pwr, Sw MOSFET P Chan, -12V, -2.5A

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 85 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 12 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V