ROHM Semiconductor RZL035P01TR MOSFETs Med Pwr, Sw MOSFET P Chan, -12V, -3.5A

Width: 1.7 mm

Height: 0.77 mm

Length: 2 mm

Fall Time: 180 ns

Rise Time: 50 ns

Technology: Si

Unit Weight: 8.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 350 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.5 S

Rds On - Drain-Source Resistance: 36 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V