ROHM Semiconductor RXH125N03TB1 MOSFETs ທີ່ແນະນຳ ALT 755-RS3E135BNGZETB

Fall Time: 18 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 55 ns

Id - Continuous Drain Current: 12.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9 S

Rds On - Drain-Source Resistance: 12 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V