ROHM Semiconductor RSR025P03HZGTL MOSFETs SOT346 P CHAN 30V

Fall Time: 1.6 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.6 S

Rds On - Drain-Source Resistance: 98 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V