ROHM Semiconductor RSQ045N03TR MOSFET N-CH 30V 4.5A TSMT6

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 14 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 14 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V