ROHM Semiconductor RSL020P03FRATR MOSFETs Pch -30V Vds -2A 0.14Rds(on) 3.9Qg

Fall Time: 11 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 55.687 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 3.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.4 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V