ROHM Semiconductor RS1E350GNTB MOSFETs 4.5V Drive Nch MOSFET. ພະລັງງານ ຖືກຜະລິດເປັນອຸປະກອນທີ່ມີຄວາມຕໍ່ຕ້ານ ON ຕໍ່ຕ່ຳ ໂດຍເທັກໂນໂລຍການປະມວງຂໍ້ມູນຂະໜາດນ້ອຍ ມີປະໂຫຍດສໍາລັບການນຳໃຊ້ໃນຂະໜາດການນຳໃຊ້ທີ່ກວ້າງ. ລາຍການກວ້າງທີ່ຄຸ້ມຄອງປະເພດຂະຫນາດກະທົບ, ປະເພດພະລັງງານສູງ ແລະ ປະເພດສັບຊ້ອນ ເພື່ອຕອບສະໜອງຄວາມຕ້ອງການຕ່າງໆ ໃນ th

Fall Time: 55.1 ns

Rise Time: 21.3 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 68 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 39 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25.3 ns

Typical Turn-Off Delay Time: 92.5 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 1.76 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V