ROHM Semiconductor RGT50NS65DGC9 IGBT Single

No. of Pins: 3

Power Dissipation: 194

Transistor Mounting: Through Hole

Transistor Case Style: TO-262

Operating Temperature Max: 175 °C

Continuous Collector Current: 48

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.65

Datasheet