ROHM Semiconductor RGT30TM65DGC9 IGBT Transistors RGT30TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 32 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 14 A