ROHM Semiconductor RE1J002YNTCL MOSFETs ສັນຍານນ້ອຍ MOSFET N-CH .9V ຂັບເຄື່ອງ .2A

Fall Time: 43 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 mS

Rds On - Drain-Source Resistance: 2.2 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 800 mV