ROHM Semiconductor RD3P200SNTL1 MOSFETs RD3P200SN ແມ່ນ Power MOSFET ທີ່ມີຄວາມຕໍ່ຕ້ານຕໍ່ການເປີດຕົວຕ່ຳ, ເໝາະສົມສໍາລັບການສະຫຼຸບສະຫຼຸບ.

Fall Time: 100 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 100 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 46 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V