ROHM Semiconductor RD3L220SNTL1 MOSFETs Nch 60V 22A TO-252(DPAK)

Fall Time: 65 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V